Hyperbolic Phonon-polariton Electroluminescence in Graphene-hBN Van Der Waals Heterostructures


APS  ·  2024

Iliya Esin; Qiushi Guo; Chen Chen; Song Liu; James Edgar; Selina Zhou; Eugene Demler; Gil Refael; Fengnian Xia;


HIGHLIGHT
Here, we demonstrate that under proper conditions, phonon-polaritons can be excited all-electrically by flowing charge carriers.
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ABSTRACT
Phonon-polaritons are electromagnetic waves resulting from the coherent coupling of photons with optical phonons in polar dielectrics. Due to their exceptional ability to confine electric fields to deep subwavelength scales with low loss, they are uniquely poised to enable a suite of applications beyond the reach of conventional photonics, such as sub-diffraction imaging and near-field energy transfer. The conventional approach to exciting phonon-polaritons through optical methods, however, necessitates costly mid-infrared and terahertz coherent light sources along with near-field scanning probes, and generally leads to low excitation efficiency due to the substantial momentum mismatch between phonon-polaritons and free-space photons. Here, we demonstrate that under proper conditions, phonon-polaritons can be excited all-electrically by flowing charge carriers. Specifically, in hexagonal boron nitride (hBN)/graphene heterostructures, by electrically driving charge carriers in ultra-high-mobility graphene out of equilibrium, we observe bright electroluminescence of hBN's hyperbolic phonon-polaritons (HPhPs) at mid-IR frequencies. The HPhP electroluminescence shows a temperature and carrier density dependence distinct from black-body or super-Planckian thermal emission. Moreover, the carrier density dependence of HPhP electroluminescence spectra reveals that HPhP electroluminescence can arise from both inter-band transition and intra-band Cherenkov radiation of charge carriers in graphene. The HPhP electroluminescence offers fundamentally new avenues for realizing electrically-pumped, tunable mid-IR and THz phonon-polariton lasers, and efficient cooling of electronic devices.

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year_of_publication2024
sourceAPS

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