Single Application 940 nm GaAlAs Photobiomodulation Immediately After Free Gingival Graft Harvesting: Randomized Controlled Trial of Early Postoperative Pain and Palatal Wound Area Reduction
| Registry | NCT07308912 |
|---|---|
| Status | Completed |
| Phase | Not applicable |
| Study type | Interventional; randomized, parallel, masking: triple, treatment |
| Enrollment | 34 (Actual) |
| Sponsor | University of Medicine and Pharmacy at Ho Chi Minh City (Other) |
| Conditions | Low Level Laser Therapy, Healthy, Postoperative Pain Management, Wound Healing |
| Interventions | 940 nm GaAlAs diode laser, palatal stent (Device) |
| Dates | start 2024-10-01, primary completion 2025-10-01, completion 2025-10-01, first posted 2025-12-30, last updated 2026-10-08 |
| Locations | 1 site in Vietnam |
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All trials for Low Level Laser Therapy All trials for Healthy All trials of 940 nm GaAlAs diode laser All trials of palatal stent
This randomized controlled clinical trial aims to evaluate the biomodulatory effects of a 940-nm GaAlAs diode laser on postoperative pain control and wound healing at the palatal donor site following free gingival graft harvesting. Adult patients undergoing free gingival graft surgery will be randomly allocated to receive either a single session of adjunctive diode laser irradiation immediately after surgery or sham laser irradiation without therapeutic laser energy delivery. Postoperative pain will be assessed using a visual analog scale, while clinical parameters related to wound healing, including bleeding tendency, epithelialization, and wound size reduction, will be evaluated at predefined follow-up time points. The findings of this study may contribute to the clinical understanding of photobiomodulation in free gingival graft surgery.
| Arm | Type | Interventions | Description |
|---|---|---|---|
| Laser group | Experimental | Device: 940 nm GaAlAs diode laser; Device: palatal stent | After suturing was completed at the recipient site, the palatal donor site in the laser group was irradiated according to the manufacturer's recommended settings using an Epic X diode laser (940-nm wavelength; 0.1-W power; energy density, 4 J/cm²; continuous-wave mode; exposure time, 40 s per field; total energy, 12 J). The laser beam was positioned perpendicular to the wound surface at a distance of 0.5 cm, with a spot size of 1 cm². Following irradiation, a palatal stent was placed. |
| Control group | Sham comparator | Device: palatal stent | After suturing was completed at the recipient site, sham laser irradiation was performed using the same procedure as in the laser group but without therapeutic laser energy delivery. A palatal stent was subsequently placed. |
Sex: All, ages: 18 Years to any, accepts healthy volunteers
Inclusion Criteria: 1. ≥18 years of age; 2. systemically healthy individuals without any conditions that could affect wound healing (e.g., diabetes, immunosuppression, coagulation disorders, Candida infection; 3. full-mouth plaque score (FMPS) and full-mouth bleeding score (FMBS) <15%; 4. no previous history of palatal tissue harvesting; 5. no use of overdentures or partial dentures covering the donor area. Exclusion Criteria: 1. pregnant or breastfeeding women; 2. smokers; 3. patients with psychiatric disorders; and 4. patients taking any medications that impair tissue healing and affect pain perception.
| Milestone | Control Group | Laser Group |
|---|---|---|
| Started | 17 | 17 |
| Completed | 17 | 16 |
| Not completed | 0 | 1 |
Time frame: From the intervention through the 14-day postoperative follow-up.
| Arm | Deaths | Serious adverse events | Other adverse events |
|---|---|---|---|
| Control Group | 0/17 (0.0%) | 0/17 (0.0%) | 0/17 (0.0%) |
| Laser Group | 0/16 (0.0%) | 0/16 (0.0%) | 0/16 (0.0%) |
| Facility | City | Country | Status |
|---|---|---|---|
| Faculty of Dentistry, University of Medicine and Pharmacy at Ho Chi Minh City | Ho Chi Minh City | Vietnam |